Turbo Power Semiconductor
Ultra high voltage silicon carbide chips for solid state transformers
Contact us15 kV SiC TurboMOS
A breakthrough in silicon carbide technology
While system-level architectures are evolving, power semiconductor technology has become the limiting factor.
Turbo Power Semiconductor Inc. was founded to solve this bottleneck. Our ultra high voltage (UHV) SiC TurboMOS will be rated at 15 kV and higher, delivering more than 40x on-resistance reduction compared to conventional SiC power MOSFET.
SST system benefits
Redefining the performance limits of power switches for AI data centers
Low cost UHV SiC devices
Enables simple two level topology in a 13.8kV SST.
2x+ power density
Eliminates per-cell capacitors, busbars, and isolation hardware, freeing enclosure volume.
~7-9x fewer active devices
Directly reduces assembly complexity, test time, and procurement risk.
Simplified control
Two-level PWM replaces modular SST balancing and synchronization algorithms, enabling faster development cycles.
Fewer failure modes
22 devices vs. 150-192 eliminates the dominant reliability risk in modular SST architectures.
Reduced ancillary BOM
Fewer gate drivers, isolated supplies, and capacitor banks partially offset higher per-device cost at current volumes.
Design flexibility
Supports straightforward N+1 redundancy, easier thermal design, and modular scale-up to 10 MW+.